Semiconductor device

US11728456B2 · kind B2 · utility

Assignee

• Epistar Corporation · TW

Inventors

• Meng-Yang Chen · Hsinchu, TW
• Yuan-Ting Lin · Hsinchu, TW

Key dates

• Filing date: May 20, 2022
• Grant date: Aug 15, 2023
• Expiry date: May 20, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/841

Abstract

A semiconductor device is provided, which includes an active structure and a first semiconductor layer. The active structure includes an active region having a topmost surface and a bottommost surface, and a first dopant distributing from the topmost surface to the bottommost surface. The first semiconductor layer is located under the active structure and includes a second dopant. The active region includes a semiconductor material including As.