Solid-state image sensor
US11729533B2 · kind B2 · utility
1Cited by
3References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 14, 2019 |
| Grant date | Aug 15, 2023 |
| Priority date | — |
| Expiry date | Apr 11, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N25/78
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A solid-state image sensor includes: an input transistor configured to output, from a drain, a drain voltage according to an input voltage input to a source in a case where the input voltage substantially coincides with a predetermined reference voltage input to a gate; and an output transistor configured to output a signal indicating whether or not a difference between the input voltage input to a source and the drain voltage input to a gate exceeds a predetermined threshold voltage as a comparison result between the input voltage and the reference voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.