Semiconductor devices
US11729963B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 27, 2021 |
| Grant date | Aug 15, 2023 |
| Priority date | — |
| Expiry date | Aug 6, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/513
Abstract
A semiconductor device includes a substrate including an isolation layer pattern and an active pattern, a buffer insulation layer pattern on the substrate, a polysilicon structure on the active pattern and the buffer insulation layer pattern, the polysilicon structure contacting a portion of the active pattern, and the polysilicon structure extending in a direction parallel to an upper surface of the substrate, a first diffusion barrier layer pattern on an upper surface of the polysilicon structure, the first diffusion barrier layer pattern including polysilicon doped with at least carbon, a second diffusion barrier layer pattern on the first diffusion barrier layer pattern, the second diffusion barrier layer pattern including at least a metal, and a first metal pattern and a first capping layer pattern stacked on the second diffusion barrier layer pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.