Capacitor, semiconductor device, and manufacturing method of semiconductor device
US11729965B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 27, 2022 |
| Grant date | Aug 15, 2023 |
| Priority date | — |
| Expiry date | Jun 27, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/811
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a transistor and a capacitor. The transistor includes a metal oxide and a first conductor that is electrically connected to the metal oxide. The capacitor includes a first insulator which is provided over the metal oxide and which the first conductor penetrates; a second insulator provided over the first insulator and including an opening reaching the first insulator and the first conductor; a second conductor in contact with an inner wall of the opening, the first insulator, and the first conductor; a third insulator provided over the second conductor; and a fourth conductor provided over the third insulator. The first insulator has higher capability of inhibiting the passage of hydrogen than the second insulator.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.