Magnetic device with gate electrode
US11730065B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 28, 2021 |
| Grant date | Aug 15, 2023 |
| Priority date | — |
| Expiry date | Sep 16, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/12
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Provided is a magnetic device including a conductive layer extended in a first direction and providing a spin Hall effect on a placement plane defined by the first direction and a second direction, a free layer disposed on the conductive layer, a fixed layer disposed on a portion of the free layer, a tunnel barrier layer disposed between the free layer and the fixed layer, a first electrode disposed on the fixed layer, a first charge storage layer disposed on the free layer so as not to overlap the fixed layer, and a first gate electrode disposed on the first charge storage layer. The first electrode and the first gate electrode are arranged in the second direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.