Patterning method of film, microfluidic device and manufacturing method thereof
US11731125B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jan 3, 2019 |
| Grant date | Aug 22, 2023 |
| Priority date | — |
| Expiry date | Jun 22, 2040 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2201/0133
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A patterning method of a film is disclosed. The method including: providing a film including a first surface; forming n etching barrier layers on the first surface of the film, and n is an integer larger than or equal to 2; and performing n etching processes on the film to form a recessed structure on the first surface using the n etching barrier layers as masks, the recessed structure includes n bottom surfaces respectively having different depths. Two adjacent etching processes of the n etching processes include a previous etching process and a subsequent etching process, and after the previous etching process is completed, a part of the n etching barrier layers is removed to form a mask for the subsequent etching process; a material of the part of the n etching barrier layers which is removed is different from a material of the mask of the subsequent etching process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.