Methods for fabricating and etching porous silicon carbide structures
US11732377B2 · kind B2 · utility
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19Claims
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Key dates
| Filing date | Sep 20, 2021 |
| Grant date | Aug 22, 2023 |
| Priority date | — |
| Expiry date | Nov 6, 2041 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC25F3/12
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present disclosure relates to methods of fabricating a porous structure, such as a porous silicon carbide structure. The methods can include a step of providing a structure to be rendered porous, and a step of providing an etching solution. The methods can also include a step of electrochemically etching the structure to produce pores through at least a region of the structure, resulting in the formation of a porous structure. The morphology of the porous structure can be controlled by one or more parameters of the electrochemical etching process, such as the strength of the etching solution and/or the applied voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.