High-performance radiation detectors and methods of fabricating thereof
US11733408B2 · kind B2 · utility
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18References
20Claims
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Key dates
| Filing date | Apr 8, 2021 |
| Grant date | Aug 22, 2023 |
| Priority date | — |
| Expiry date | Feb 8, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/807
- WIPO fieldEnvironmental technology
- WIPO sectorChemistry
Abstract
A radiation detector includes a semiconductor layer having opposing first and second surfaces, anodes disposed over the first surface of the semiconductor layer in a pixel pattern, a cathode disposed over the second surface of the semiconductor layer, and an electrically conductive pattern disposed over the first surface of the semiconductor layer in interpixel gaps between the anodes. At least a portion of the electrically conductive pattern is not electrically connected to an external bias source.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.