Optical proximity correction method and method of fabricating a semiconductor device using the same
US11733604B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 21, 2021 |
| Grant date | Aug 22, 2023 |
| Priority date | — |
| Expiry date | Feb 11, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/5286
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a semiconductor device is disclosed. The method includes performing an optical proximity correction (OPC) on design patterns of a layout to generate a corrected layout, and forming a photoresist pattern on a substrate using a photomask manufactured based on the corrected layout. The OPC comprises generating develop targets for the design patterns, respectively, choosing first object patterns based on distances between the develop targets, performing a first OPC operation on the design patterns based on a mask rule to generate first correction patterns, choosing second object patterns by considering distances between the first correction patterns and a target error of each of the first correction patterns, and performing a second OPC operation on the first and second object patterns to generate second correction patterns, the performing the second OPC not based on the mask rule.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.