Patent · US Active

Memory array for storing odd and even data bits of data words in alternate sub-banks to reduce multi-bit error rate and related methods

US11733898B2 · kind B2 · utility

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1References
21Claims
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Inventor

Key dates

Filing dateApr 26, 2021
Grant dateAug 22, 2023
Priority date
Expiry dateApr 26, 2041

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C11/4125
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A memory array for storing odd and even data bits of data words in alternate sub-banks to reduce multi-bit error rate is disclosed. The memory array alternates odd data bits of a first plurality of data words in consecutive columns a first sub-bank of first and second memory banks and even data bits of the first plurality of data words in consecutive columns of a second sub-bank of the first and second memory banks. For example, the lowest bits of each of N data words are stored in a first N consecutive columns of a first sub-bank. The second bits of the N data words are stored in the next N consecutive columns of a second sub-bank. The N data bits in each of the bit positions of the N data words are interleaved in corresponding column mux sets. Alternating odd and even bits between sub-banks reduces multi-bit soft errors.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.