Patent · US Active

Faraday cleaning device and plasma processing system

US11735400B2 · kind B2 · utility

0Cited by

1References

6Claims

0Family size

Assignee

JIANGSU LEUVEN INSTRUMENTS CO. LTD · CN

Inventors

Haiyang Liu · Norman, US
Dongdong HU · 安丰镇, CN
Xiaobo Liu · Beijing, CN
Na Li · Beijing, CN
Shiran CHENG · 安丰镇, CN
Song GUO · 安丰镇, CN
Zhihao Wu · 安丰镇, CN
Kaidong XU · Xuzhou, CN

Key dates

Filing date	Feb 26, 2020
Grant date	Aug 22, 2023
Priority date	—
Expiry date	Feb 26, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH01J2237/3341
WIPO fieldElectrical machinery, apparatus, energy
WIPO sectorElectrical engineering

Abstract

Provided are a faraday cleaning device and a plasma processing system, the device comprising a reaction chamber, a bias electrode, a wafer, a chamber cover, a coupling window, an air inlet nozzle, a vertical coil, and a faraday layer, wherein the coupling window is installed at the upper end face of the chamber cover, the chamber cover is installed at the upper end face of the reaction chamber, the bias electrode is assembled inside the reaction chamber, the wafer is installed at the upper end face of the bias electrode, the air inlet nozzle is assembled inside the coupling window, the faraday layer is installed at the upper end face of the coupling window, and the vertical coil is assembled at the upper end face of the faraday layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.