Semiconductor device
US11735588B2 · kind B2 · utility
0Cited by
8References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 25, 2019 |
| Grant date | Aug 22, 2023 |
| Priority date | — |
| Expiry date | Aug 19, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/83
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a substrate having a first region and a second region. A device isolation layer is disposed in the substrate between the first region and the second region. The device isolation layer includes a buried dielectric layer in a trench that is recessed from a top surface of the substrate. A first liner layer is between the trench and the buried dielectric layer. A semiconductor layer is disposed on a top surface of the substrate of the first region. A first gate pattern is disposed on the semiconductor layer. A protrusion is disposed on a top surface of the device isolation layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.