Global shutter CMOS image sensor and method for making the same

US11735610B2 · kind B2 · utility

Assignee

• Shanghai Huali Microelectronics Corporation · CN

Inventors

• Zhi Tian · Shanghai, CN
• Zhen Gu · Los Angeles, US
• Hua Shao · Nanhu, CN
• Haoyu Chen · Hefei, CN

Key dates

• Filing date: Nov 18, 2020
• Grant date: Aug 22, 2023
• Expiry date: Aug 21, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/199

Abstract

The disclosure discloses a global shutter CMOS image sensor, which adopts non-uniform storage diffusion region doping to reduce the junction leakage at storage points, so as to ensure that with the increase of the depth of photodiodes and the increase of pixels, all carriers in rows read subsequently can be transferred to storage diffusion regions, the loss of the carriers in the storage diffusion regions is not caused when a global shutter transistor is turned on, and the carriers can be completely transferred from the storage diffusion regions to floating diffusion regions through second transfer transistors even if the number of rows of pixel units increases during reading-out row by row. The disclosure further discloses a method for making the global shutter CMOS image sensor.