Semiconductor device
US11735632B2 · kind B2 · utility
0Cited by
12References
21Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 9, 2021 |
| Grant date | Aug 22, 2023 |
| Priority date | — |
| Expiry date | Dec 9, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/834
Abstract
A semiconductor device includes a substrate, a fin structure on the substrate, a gate structure on the fin structure, a gate spacer on at least on side surface of the gate structure, and a source/drain structure on the fin structure, wherein a topmost portion of a bottom surface of the gate spacer is lower than a topmost portion of a top surface of the fin structure, and a topmost portion of a top surface of the source/drain structure is lower than the topmost portion of the top surface of the fin structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.