Heterogeneous structures comprising III-V semiconductors and metal oxide dielectrics, and a method of fabrication thereof
US11735643B2 · kind B2 · utility
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Key dates
| Filing date | Oct 12, 2020 |
| Grant date | Aug 22, 2023 |
| Priority date | — |
| Expiry date | Dec 11, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/3171
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Systems and methods for passivation of III-V semiconductors to create heterogeneous structures based on such semiconductors, to the structures themselves, and to devices using passivated III-V semiconductors, such as metal oxide-semiconductor field effect transistors (MOSFET) and Hall effect sensors using III-V semiconductors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.