Waveguide type photodetector and method of manufacture thereof

US11735679B2 · kind B2 · utility

Assignee

• Rockley Photonics Limited · GB

Inventors

• Yi Zhang · Pasadena, US
• Hooman Abediasl · Los Angeles, US
• Aaron John Zilkie · Pasadena, US

Key dates

• Filing date: May 29, 2019
• Grant date: Aug 22, 2023
• Expiry date: May 29, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F30/223

Abstract

A silicon based photodetector and method of manufacturing the same are provided. The photodetector comprising: a silicon substrate; a buried oxide layer, above the silicon substrate; and a waveguide, above the buried oxide layer. The waveguide includes a silicon, Si, containing region and a germanium tin, GeSn, containing region, both located between a first doped region and a second doped region of the waveguide, thereby forming a PIN diode. The first doped region and the second doped region are respectively connected to first and second electrodes, such that the waveguide is operable as a photodetector.