Single-crystal beta-Ga2O3 MSM detector and preparation method thereof
US11735683B1 · kind B1 · utility
Assignees
Inventors
Key dates
| Filing date | Feb 15, 2023 |
| Grant date | Aug 22, 2023 |
| Priority date | — |
| Expiry date | Feb 15, 2043 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A single-crystal β-Ga2O3 MSM detector and a preparation method thereof, comprising: machining grooves on a single-crystal β-Ga2O3 substrate using a laser-assisted waterjet machining technique to form a 3D shape; wet etching the machined single-crystal β-Ga2O3 substrate using an HF solution to remove machining damage; performing Au evaporation on a surface of the single-crystal β-Ga2O3 substrate after processing, coating an Au thin film on the surface of the single-crystal β-Ga2O3 substrate; and grinding the surface of the single-crystal β-Ga2O3 substrate after evaporation to remove the Au thin film on an undressed surface and retain the Au thin film in the grooves, and then obtaining the single-crystal β-Ga2O3 MSM detector.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.