Semiconductor light emitting device and semiconductor light emitting package
US11735694B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 23, 2020 |
| Grant date | Aug 22, 2023 |
| Priority date | — |
| Expiry date | Dec 30, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/857
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor light emitting devices and packages are provided. The semiconductor light emitting device includes a substrate, a luminous structure, and first and second electrodes. The substrate has a first region and a second region that is spaced apart in a first direction from the first region. The luminous structure includes a first semiconductor layer, an active layer, and a second semiconductor layer that are sequentially stacked on the substrate. The first electrode is on the second semiconductor layer. The second electrode is electrically coupled to the first semiconductor layer through plural first openings that penetrate the first electrode, the second semiconductor layer, and the active layer, where the first openings expose the first semiconductor layer. The first electrode is in contact with the second semiconductor layer in the first region and in the second region, and the first openings are in the first region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.