Film bulk acoustic resonator with spurious resonance suppression
US11736088B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 16, 2020 |
| Grant date | Aug 22, 2023 |
| Priority date | — |
| Expiry date | Oct 27, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H2009/0233
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Devices and processes for preparing devices are described for reducing resonance of spurious waves in a bulk acoustic resonator and/or for obstructing propagation of lateral waves out of an active region of the bulk acoustic resonator. A first electrode is coupled to a first side of a piezoelectric layer and a second electrode is coupled to a second side of the piezoelectric layer to form a stack having the active region. The piezoelectric layer in the active region is configured to resonate in response to an electrical signal applied between the first electrode and the second electrode. One or more perforations in the first electrode, the piezoelectric layer and/or the second electrode, and/or one or more posts or beams supporting the stack, reduce resonance of spurious waves and obstruct propagation of lateral acoustic waves out of the active region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.