Selector devices for a memory cell

US11737286B2 · kind B2 · utility

Assignee

• The Research Foundation for The State University of New York · US

Inventors

• Karsten BECKMANN · Albany, US
• Nathaniel Cady · Albany, US

Key dates

• Filing date: Sep 23, 2019
• Grant date: Aug 22, 2023
• Expiry date: Oct 15, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8833

Abstract

A selector device includes a first electrode composed of a first metal having a first work function. A second electrode is composed of a second metal having a second work function. A selector layer is disposed between the first and second electrodes and is composed of a dielectric material having a conduction band and a valence band defining a band gap of at least 5 electron volts. Dopant atoms are disposed in the selector layer to form a sub-conduction band that is below the conduction band and above the work functions. When a threshold voltage is applied across the first and second electrodes, and a magnitude of the threshold voltage exceeds an energy difference between the sub-conduction band and the work functions, but does not exceed an energy difference between the conduction band and the work functions, an on-current will conduct through the selector layer.