Bonded substrate including polycrystalline diamond film
US11738539B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 23, 2021 |
| Grant date | Aug 29, 2023 |
| Priority date | — |
| Expiry date | Dec 1, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H9/02897
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A wafer has a layer containing silicon, a layer of polycrystalline diamond deposited on the silicon-containing layer, and a bow-compensation layer on the other side of the silicon-containing layer for reducing wafer-bow. A method of making a bonded structure includes an activation process for creating dangling bonds on the surface of one substrate, followed by contact-bonding the surface to a second substrate at low temperature. A bonded structure may include two substrates contact bonded to each other, one substrate including a layer containing silicon, a layer of polycrystalline diamond, a bow-compensation layer for reducing wafer-bow of the first substrate, and the other substrate including gallium nitride, silicon carbide, lithium niobate, lithium tantalate, gallium arsenide, indium phosphide, or another suitable material other than diamond.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.