Silicon substrate having cavity and cavity SOI substrate including the silicon substrate
US11738993B2 · kind B2 · utility
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Key dates
| Filing date | May 27, 2021 |
| Grant date | Aug 29, 2023 |
| Priority date | — |
| Expiry date | Jan 12, 2042 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2203/036
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A silicon substrate having a first silicon substrate having a first surface with a cavity and a second surface opposite the first surface; a first silicon oxide film having a thickness d1 on the first surface; a second silicon oxide film having a thickness d2 on a bottom of the cavity; and a third silicon oxide film having a thickness d3 on the second surface, where d1≤d3 and d1<d2, or d3<d1 and d2<d1.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.