Conductive sputter targets with silicon, zirconium and oxygen
US11739415B2 · kind B2 · utility
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8Claims
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Key dates
| Filing date | Nov 12, 2019 |
| Grant date | Aug 29, 2023 |
| Priority date | — |
| Expiry date | Jul 8, 2040 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B2235/96
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A target for sputtering comprises SiZrxOy wherein x is higher than 0.02 but not higher than 5, and y is higher than 0.03 but not higher than 2*(1+x), wherein the target has an XRD pattern with silicon 2-theta peak at 28.29°+/−0.3°, or a tetragonal phase ZrO2 2-theta peak at 30.05°+/−0.3°. The target has a low resistivity, below 1000 ohm·cm, preferably below 100 ohm·cm, more preferably below 10 ohm·cm, even lower than 1 ohm·cm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.