Patent · US Active

Conductive sputter targets with silicon, zirconium and oxygen

US11739415B2 · kind B2 · utility

0Cited by
3References
8Claims
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Key dates

Filing dateNov 12, 2019
Grant dateAug 29, 2023
Priority date
Expiry dateJul 8, 2040

Classification

  • Technology area (CPC C)Chemistry; Metallurgy
  • CPC primaryC04B2235/96
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

A target for sputtering comprises SiZrxOy wherein x is higher than 0.02 but not higher than 5, and y is higher than 0.03 but not higher than 2*(1+x), wherein the target has an XRD pattern with silicon 2-theta peak at 28.29°+/−0.3°, or a tetragonal phase ZrO2 2-theta peak at 30.05°+/−0.3°. The target has a low resistivity, below 1000 ohm·cm, preferably below 100 ohm·cm, more preferably below 10 ohm·cm, even lower than 1 ohm·cm.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.