Patent · US Active

Apparatuses for reducing metal residue in edge bead region from metal-containing resists

US11740559B2 · kind B2 · utility

0Cited by
8References
20Claims
0Family size

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Key dates

Filing dateOct 11, 2021
Grant dateAug 29, 2023
Priority date
Expiry dateOct 11, 2041

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/67051
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

Apparatuses and methods are described for removing edge bead on a wafer associated with a resist coating comprising a metal containing resist compositions. The methods can comprise applying a first bead edge rinse solution along a wafer edge following spin coating of the wafer with the metal based resist composition, wherein the edge bead solution comprises an organic solvent and an additive comprising a carboxylic acid, an inorganic fluorinated acid, a tetraalkylammonium compound, or a mixture thereof. Alternatively or additionally, the methods can comprise applying a protective composition to the wafer prior to performing an edge bead rinse. The protective composition can be a sacrificial material or an anti-adhesion material and can be applied only to the wafer edge or across the entire wafer in the case of the protective composition. Corresponding apparatuses for processing the wafers using these methods are presented.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.