Semiconductor device and method of manufacturing the same
US11741285B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 29, 2021 |
| Grant date | Aug 29, 2023 |
| Priority date | — |
| Expiry date | Feb 3, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/832
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a substrate having an active region, first standard cells arranged in a first row on the active region, second standard cells arranged in a second row on the active region and having a first boundary with the first standard cells, a third standard cells arranged in a third row on the active region and having a second boundary with the first standard cells, and a plurality of power supply lines, respectively arranged along boundaries. Each of the first to third standard cells includes a plurality of fin patterns extending in the first direction, and the plurality of fin patterns are arranged in a second direction, so as not to be disposed on at least one boundary, among the first and second boundaries.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.