Integrated thin film resistor and memory device
US11742283B2 · kind B2 · utility
0Cited by
12References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 31, 2020 |
| Grant date | Aug 29, 2023 |
| Priority date | — |
| Expiry date | Sep 1, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/80
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to an integrated thin film resistor with a memory device and methods of manufacture. The structure includes a memory device in back end of line (BEOL) materials and a thin film resistor located in the BEOL materials. The thin film resistor includes electrical resistive material, and an insulator material over the electrical resistive material is thicker than insulator material over the memory device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.