FinFET ESD device with fin-cut isolation region
US11742342B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 8, 2021 |
| Grant date | Aug 29, 2023 |
| Priority date | — |
| Expiry date | Jul 11, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/62
Abstract
An electrostatic discharge (ESD) device having a small size, a low turn-on voltage, and a low on resistance and an ESD protection circuit including the ESD device are provided. The ESD device includes a well formed in a substrate to have a first conductive type, an active region being defined at an upper portion of the substrate, a plurality of fins extending in a first direction to have a structure protruding from the substrate, a first conductive impurity region formed with first conductive impurities, a second conductive impurity region formed with second conductive impurities, and a fin-cut isolation region disposed between the first conductive impurity region and the second conductive impurity region in the first direction to cut each fin, wherein a bottom surface of the fin-cut isolation region is higher than a bottom surface of the active region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.