Semiconductor device and manufacturing method thereof
US11742397B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 8, 2020 |
| Grant date | Aug 29, 2023 |
| Priority date | — |
| Expiry date | Feb 12, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/343
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of this application disclose a semiconductor device and a manufacturing method thereof. The semiconductor device includes a substrate, a first nitride semiconductor layer disposed on the substrate and having a first bandgap, and a second nitride semiconductor layer disposed on the first nitride semiconductor layer and having a second bandgap. The second bandgap is larger than the first bandgap. The semiconductor device further includes a gate contact disposed over the second nitride semiconductor layer and a first field plate disposed over the gate contact. The first field plate has a first surface facing the substrate, a second surface facing the substrate, and a protruded portion. The protruded portion has a bottom surface facing the substrate. The bottom surface is located between the first surface and the second surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.