Semiconductor structure and method for manufacturing the same
US11742416B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 27, 2021 |
| Grant date | Aug 29, 2023 |
| Priority date | — |
| Expiry date | May 28, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A semiconductor structure includes: a semiconductor substrate; a first source/drain feature and a second source/drain feature over the semiconductor substrate; and semiconductor layers extending longitudinally in a first direction and connecting the first source/drain feature and the second source/drain feature. The semiconductor layers are spaced apart from each other in a second direction perpendicular to the first direction. The semiconductor structure further includes inner spacers each between two adjacent semiconductor layers; metal oxide layers interposing between the inner spacers and the semiconductor layers; and a gate structure wrapping around the semiconductor layers and the metal oxide layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.