Patent · US Active

Backplane, preparation method with dual damascene steps

US11742467B2 · kind B2 · utility

0Cited by

0References

17Claims

0Family size

Assignee

BOE Technology Group Co., Ltd. · CN

Inventors

Zhiwei Liang · Beijing, CN
Wenqian Luo · Beijing, CN
Yingwei Liu · Beijing, CN
Ke Wang · Beijing, CN
Shengguang Ban · Beijing, CN
Zhanfeng Cao · Beijing, CN

Key dates

Filing date	Jul 2, 2020
Grant date	Aug 29, 2023
Priority date	—
Expiry date	Oct 31, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH10H20/0364
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A preparation method of a backplane includes: forming an insulating structure layer having a groove on a base substrate by a mask exposure process, the groove being used for accommodating a metal trace; and repeating a metal sub-layer forming step including an ashing process and a wet etching process multiple times to form the metal trace positioned in the groove.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.