Semiconductor devices and methods of manufacturing semiconductor devices
US11742565B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 18, 2021 |
| Grant date | Aug 29, 2023 |
| Priority date | — |
| Expiry date | Aug 18, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3025
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device can comprise a substrate dielectric structure and a substrate conductive structure that traverses the substrate dielectric structure and comprises first and second substrate terminals; an electronic component with a component terminal coupled to the first substrate terminal; and a first antenna element with a first element terminal coupled to the second substrate terminal, a first element head side adjacent a first antenna pattern, a first element base side opposite the first element side, and a first element sidewall. The first element terminal can be exposed from the first element dielectric structure at the first element base side or at the first element sidewall. The first antenna pattern can be coupled to the substrate through the first element terminal. The substrate conductive structure can couple the first antenna element to the electronic component. Other examples and methods are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.