Patent · US Active

BAW resonator with improved power durability and heat resistance and RF filter comprising a BAW resonator

US11742823B2 · kind B2 · utility

0Cited by

2References

20Claims

0Family size

Assignee

RF360 Singapore · US

Inventors

Maximilian SCHIEK · Puchheim, DE
Roland ROSEZIN · Bernau, DE
Willi AIGNER · Moosinning, DE
Thomas MITTERMAIER · Schwindegg, DE
Edgar Schmidhammer · Stein an der Traun, DE
Stephane Chamaly · Singapore, SG
Xavier Perois · Mouans-Sartoux, FR
Christian Huck · Landeck, AT
Alexandre Augusto Shirakawa · San Jose, US

Key dates

Filing date	Mar 5, 2019
Grant date	Aug 29, 2023
Priority date	—
Expiry date	May 19, 2039

Classification

Technology area (CPC H)Electricity
CPC primaryH03H9/542
WIPO fieldBasic communication processes
WIPO sectorElectrical engineering

Abstract

A BAW resonator (BAWR) with improved power durability and improved heat resistance is provided. The resonator comprises a layer stack with a piezoelectric material (PM) between a bottom electrode (ELI) and a top electrode (EL2) and a shunt path parallel (PCPP) to the layer stack provided to enable an RF signal to bypass the layer stack, e.g. to ground (GND). The shunt path (PCPP) has a temperature dependent conductance with a negative temperature coefficient, NTC, of resistance. When the temperature of the device rises due to high power operation, currents that would otherwise permanently damage the device are shunted to ground or another dedicated terminal by the temperature dependent shunt path. Upon cooling down normal operation is resumed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.