Semiconductor memory devices including separate upper and lower bit line spacers and methods of forming the same
US11744063B2 · kind B2 · utility
0Cited by
8References
22Claims
0Family size
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Key dates
| Filing date | Jul 13, 2021 |
| Grant date | Aug 29, 2023 |
| Priority date | — |
| Expiry date | Aug 3, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A volatile memory device can include a bit line structure having a vertical side wall. A lower spacer can be on a lower portion of the vertical side wall, where the lower spacer can be defined by a first thickness from the vertical side wall to an outer side wall of the lower spacer. An upper spacer can be on an upper portion of the vertical side wall above the lower portion, where the upper spacer can be defined by a second thickness that is less than the first thickness, the upper spacer exposing an uppermost portion of the outer side wall of the lower spacer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.