Hard-mask composition
US11746255B2 · kind B2 · utility
0Cited by
1References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 25, 2018 |
| Grant date | Sep 5, 2023 |
| Priority date | — |
| Expiry date | Feb 25, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0332
- WIPO fieldMacromolecular chemistry, polymers
- WIPO sectorChemistry
Abstract
Disclosed and claimed herein is a composition for forming a spin-on hard-mask, having a fullerene derivative substituted with an amine and a crosslinking agent. The formulation is drain compatible with other solvents used in the semiconductor industry.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.