Quantum dot composite material, preparation method, and semiconductor device
US11746293B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 11, 2021 |
| Grant date | Sep 5, 2023 |
| Priority date | — |
| Expiry date | Nov 11, 2041 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/549
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A quantum dot (QD) composite material includes at least two structural units arranged sequentially along a radial direction. The QD composite material includes a type A3 QD structural unit and a type A4 QD structural unit. The type A3 QD structural units has a gradient alloy composition structure with an energy level width increasing along the radial direction toward a surface, and the type A4 QD structural unit has a homogeneous alloy composition structure. An inner part of the QD composite material includes one or more QD structural units having a gradient alloy composition structure, and energy levels in adjacent QD structural units having gradient alloy composition structures are continuous. The QD composite material includes one or more QD structural units having a homogeneous alloy composition structure in a region close to the surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.