Measuring method and semiconductor structure forming method
US11747131B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Aug 8, 2022 |
| Grant date | Sep 5, 2023 |
| Priority date | — |
| Expiry date | Aug 8, 2042 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R33/02
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A measuring method is provided. A probe and a first sensor are disposed over a jig including a bar protruding from the jig. The probe is moved until a first surface of the probe is laterally aligned with a second surface of the bar facing the jig. A first distance between the second surface of the bar and the first sensor is obtained by the first sensor. The probe and the first sensor are disposed over a magnetron. Magnetic field intensities at different elevations above the magnetron are measured by the probe. A method for forming a semiconductor structure is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.