Sensors based on negative capacitance field effect transistors
US11747296B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 29, 2020 |
| Grant date | Sep 5, 2023 |
| Priority date | — |
| Expiry date | Sep 14, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/2273
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Chemical sensors and methods of forming and making the same include an input terminal and an output terminal. A negative capacitance structure is configured to control a current passing horizontally from the input terminal to the output terminal, and has a first and second metal layer that are arranged vertically with respect to one another, and a ferroelectric layer positioned between the first and second metal layers. An electrode is in electrical contact with the negative capacitance structure, and is configured to change potential, to exceed a threshold, thereby triggering a discontinuous polarization change in the negative capacitance structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.