Device and method for measuring high electron mobility transistor
US11747389B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 24, 2020 |
| Grant date | Sep 5, 2023 |
| Priority date | — |
| Expiry date | Jun 10, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The application relates to a device and method for measuring a high electron mobility transistor. The device provided includes a controller, a protection circuit, a load circuit and a switching circuit electrically connected between the load circuit and the protection circuit. The controller is configured to provide a first control signal having a first value to a semiconductor component at a first time point and provide a second control signal having a second value to the switching circuit at a second time point. The semiconductor component is turned on by the first value of the first control signal, and the switching circuit is turned on by the second value of the second control signal. The second time point is later than the first time point.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.