Optical thin film having metal layer containing silver and high standard electrode potential metal
US11747520B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 14, 2020 |
| Grant date | Sep 5, 2023 |
| Priority date | — |
| Expiry date | Jun 5, 2042 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2201/38
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The optical thin film is provided on a substrate and includes, in order, from the substrate side, an interlayer, a silver-containing metal layer, and a dielectric layer, in which an anchor region including an oxide of an anchor metal is provided in an interface region of the silver-containing metal layer on a side close to the interlayer, a cap region including an oxide of the anchor metal is provided in an interface region of the silver-containing metal layer on a side close to the dielectric layer, a film thickness of the silver-containing metal layer is 6 nm or less, the silver-containing metal layer contains a high standard electrode potential metal, and a peak position of a concentration distribution of the high standard electrode potential metal in a film thickness direction of the silver-containing metal layer is positioned closer to the interlayer than a peak position of a silver concentration distribution.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.