Semiconductor optical phased arrays (OPA's) and methods related thereto
US11747658B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 26, 2022 |
| Grant date | Sep 5, 2023 |
| Priority date | — |
| Expiry date | Aug 26, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L25/167
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Disclosed is a system and method for solid-state 2D optical phased arrays (OPAs), which are fabricated from In-rich In1-xGaxN/GaN multiple quantum wells (MQWs). In-rich InxGa1-xN alloys possess the unique properties of exceptionally high free-carrier-induced refractive index (n) change and low optical loss. InGaN/GaN MQW pixels play the role of using a very small fraction of a laser beam to modulate the phase of the laser beam. The phase of each MQW pixel in the OPA is controlled independently via electro-optic effect through the integration between OPA pixels with a Laterally Diffused MOSFET (LDMOS) integrated circuit driver to achieve the manipulation of the distribution of optical power in the far field. The present invention is applicable to a wide range of applications, including the operation of LIDAR systems, laser weapons, laser illuminators, and laser imaging systems.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.