Semiconductor storage device controlling a voltage applied at a start of a verify operation in each of plural loops included in a write sequence
US11749348B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 26, 2021 |
| Grant date | Sep 5, 2023 |
| Priority date | — |
| Expiry date | Aug 26, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B69/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor storage device includes: a plurality of first memory cells; a word line connected to gates of the first memory cells; a voltage generation circuit configured to generate voltage to be supplied to the word line on the basis of a set value; and a control unit configured to execute a write sequence that includes a plurality of loops, each loop including a program operation to increase a threshold voltage of at least part of the first memory cells to thereby write data to the first memory cells and a verify operation to verify the data written to the first memory cells. The voltage generation circuit generates voltage to be supplied to the word line at start of the verify operation on the basis of a first set value, and the control unit adjusts the first set value in accordance with progress of the write sequence.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.