Patent · US Active

Ion implantation apparatus

US11749501B2 · kind B2 · utility

0Cited by
3References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 8, 2021
Grant dateSep 5, 2023
Priority date
Expiry dateOct 8, 2041

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/046
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

An ion implantation apparatus includes a transfer device that transfers a wafer, a support device that supports the wafer at an implantation position, and a control device that controls the ion implantation apparatus to perform chain implantation processing on the wafer, and that controls the transfer device or the support device according to warpage information of the wafer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.