Patent · US Active

Polishing method, and polishing composition and method for producing the same

US11749531B2 · kind B2 · utility

0Cited by
4References
18Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 6, 2018
Grant dateSep 5, 2023
Priority date
Expiry dateJul 13, 2041

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/31053
  • WIPO fieldBasic materials chemistry
  • WIPO sectorChemistry

Abstract

A polishing method according to the present invention, includes polishing a polishing object containing a silicon material by using a polishing composition containing abrasive grains, a tri- or more polyvalent hydroxy compound and a dispersing medium and having pH of less than 6.0.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.