Power semiconductor module with laser-welded leadframe
US11749633B2 · kind B2 · utility
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2References
22Claims
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Assignee
Inventors
Key dates
| Filing date | Mar 12, 2020 |
| Grant date | Sep 5, 2023 |
| Priority date | — |
| Expiry date | Aug 8, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/386
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A power semiconductor module includes a substrate with a structured metallization layer and a number of semiconductor chips. Each chip has a first power electrode bonded to the metallization layer. A leadframe is laser-welded to second power electrodes of the semiconductor chips for electrically interconnecting the semiconductor chips. A control conductor is attached to the leadframe opposite to the semiconductor chips and is electrically isolated from the leadframe. The control conductor is electrically connected to control electrodes of the semiconductor chips in the group.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.