Photoconductive metasurface-based ultrafast device
US11749694B1 · kind B1 · utility
1Cited by
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11Claims
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Key dates
| Filing date | Jul 30, 2020 |
| Grant date | Sep 5, 2023 |
| Priority date | — |
| Expiry date | Aug 7, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01Q23/00
- WIPO fieldTelecommunications
- WIPO sectorElectrical engineering
Abstract
A theoretically perfectly absorbing photoconductive all-dielectric metasurface is provided. This metasurface can improve the efficiency and performance of ultrafast photoconductive switches and detectors. In an embodiment, the metasurface is incorporated in photoconductive THz switches or detectors. In embodiments, the metasurface is constituted by a network of gallium arsenide resonators. Each resonator supports two degenerate and critically coupled magnetic dipole modes. Simultaneous excitation of these two modes leads to theoretically close-to-perfect optical absorption near the resonant wavelength.
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