Solid-state image sensor with pillar surface microstructure and method of fabricating the same
US11749699B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 10, 2022 |
| Grant date | Sep 5, 2023 |
| Priority date | — |
| Expiry date | Jul 10, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8063
Abstract
A method of fabricating a solid-state image sensor, including steps of forming a second type doped semiconductor layer and a semiconductor material layer sequentially on a first type doped semiconductor substrate to constitute a photoelectric conversion portion, forming a multilayer structure on the semiconductor material layer, wherein a refractive index of the multilayer structure gradually decreases from a bottom layer to a top layer of the multilayer structure and is smaller than a refractive index of the semiconductor material layer, and performing a photolithography process to the multiplayer structure and the photoelectric conversion portion to form multiple micro pillars, wherein the micro pillars protrude from the semiconductor material layer and are isolated by recesses extending into the photoelectric conversion portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.