Patent · US Active

Semiconductor device structure with magnetic element

US11749711B2 · kind B2 · utility

1Cited by
3References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 19, 2022
Grant dateSep 5, 2023
Priority date
Expiry dateFeb 20, 2042

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2224/05
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and a magnetic element over the semiconductor substrate. The semiconductor device structure also includes an adhesive element between the magnetic element and the substrate. The adhesive element extends exceeding opposite edges of the magnetic element. The semiconductor device structure further includes an isolation element extending exceeding the opposite edges of the magnetic element. The isolation element partially covers a top surface of the magnetic element. In addition, the semiconductor device structure includes a conductive line over the isolation element.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.