Active pattern structure and semiconductor device including the same
US11749754B2 · kind B2 · utility
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9Claims
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Key dates
| Filing date | Dec 14, 2021 |
| Grant date | Sep 5, 2023 |
| Priority date | — |
| Expiry date | Dec 14, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/115
Abstract
An active pattern structure includes a lower active pattern protruding from an upper surface of a substrate in a vertical direction substantially perpendicular to an upper surface of the substrate, a buffer structure on the lower active pattern, at least a portion of which may include aluminum silicon oxide, and an upper active pattern on the buffer structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.