Flip chip type light emitting device
US11749784B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 11, 2020 |
| Grant date | Sep 5, 2023 |
| Priority date | — |
| Expiry date | Sep 16, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/831
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A light emitting device includes a substrate; a first conductivity type semiconductor layer disposed on the substrate; a mesa; a transparent electrode; a contact electrode; a first insulating reflection layer; a first pad electrode and a second pad electrode; and a second insulating reflection layer. The first insulating reflection layer covers at least a portion of the light emitting structure, the transparent electrode and the contact electrode. The second insulating reflection layer is disposed on an opposite end of the substrate. The first and/or second insulating reflection layer have at least two regions which have different reflectivity properties.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.