Semiconductor device and power conversion device
US11750090B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 1, 2019 |
| Grant date | Sep 5, 2023 |
| Priority date | — |
| Expiry date | Aug 8, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH02M7/5387
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a substrate having a first surface, a first electrode, a second electrode and a third electrode formed on the first surface, a first semiconductor element and a second semiconductor element disposed in the interior of the substrate, a first wiring group electrically connecting the first electrode to the first semiconductor element, and a fourth wiring group electrically connecting the second semiconductor element to the second electrode. The first wiring group includes a first connection part disposed in the interior of the substrate. The fourth wiring group includes a second connection part disposed in the interior of the substrate. When a voltage is applied between the first electrode and the third electrode to cause current to flow through the second electrode, a direction of current flowing through first connection part is opposite to a direction of current flowing through the second connection part.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.